IndiumV3, Main, Repository, bibRecord, 01C393

Photoluminescence and band offsets of AlInAs/InP

Identifieur interne : 01C393 ( Main/Repository ); précédent : 01C392; suivant : 01C394

Photoluminescence and band offsets of AlInAs/InP

Auteurs : RBID : Pascal:96-0047626

Descripteurs français

Pascal (Inist)
- Photoluminescence, Interface solide solide, Etat impureté, Accepteur, Etat localisé, Energie liaison, Discontinuité bande, Autocohérence, Matériau semiconducteur, Composé binaire, Composé ternaire, Indium phosphure, Indium arséniure, Aluminium arséniure, Etude expérimentale, Décomposition niveau énergie, 7866F.

English descriptors

KwdEn :
- Acceptors, Aluminium arsenides, Band offset, Binary compounds, Binding energy, Energy-level splitting, Experimental study, Impurity states, Indium arsenides, Indium phosphides, Localized states, Photoluminescence, Self consistency, Semiconductor materials, Solid-solid interfaces, Ternary compounds.

Abstract

We report the temperature dependence of Al_0.46In_0.54As photoluminescence (PL) transition energies and Al_0.46In_0.54As/InP interface staggered line-up luminescence (SLL) energy. The S shape appearing from 4 to 90 K on the energy versus temperature curves of these PL energies is due to extrinsic recombinations. In particular, the S shape of the SLL energy curve versus temperature is probably due to acceptor impurities localized in AllnAs, at the interface (on-edge impurities). The binding energy of on-edge impurities is lower than its value in the bulk material. This explains why the S shape is less pronounced on the SLL than on the AllnAs PL curve. The band offsets were determined by solving the Schrödinger-Poisson equation system with a self-consistent calculation program. At 4.5 K, the conduction and valence band offsets of the Al_0.46In_0.54As/InP interface were respectively 0.384 eV and 0.295 eV. This is in agreement with the already reported value of 410 meV for the conduction band offset of the lattice-matched Al_0.48In_0.52As/InP heterostructure. The temperature dependence of the conduction and valence band offsets is shown to be important : respectively 35 meV and 23 meV between 4.5 and 300 K. The Van Vechten-Malloy model (following a thermodynamic approach) for the temperature dependence of the band offsets is compared with our results. The comparison shows only a qualitative agreement.

Links toward previous steps (curation, corpus...)

to stream Main, to step Corpus: 01B761

Links to Exploration step

Pascal:96-0047626

Le document en format XML

<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Photoluminescence and band offsets of AlInAs/InP</title>
<author><name sortKey="Abraham, P" uniqKey="Abraham P">P. Abraham</name>
<affiliation wicri:level="3"><inist:fA14 i1="01"><s1>CNRS Univ. Claude Bernard Lyon, URA 116 lab. physico chimie minérale</s1>
<s2>69622 Villeurbanne</s2>
<s3>FRA</s3>
<sZ>1 aut.</sZ>
</inist:fA14>
<country>France</country>
<placeName><region type="region" nuts="2">Rhône-Alpes</region>
<settlement type="city">Villeurbanne</settlement>
</placeName>
</affiliation>
</author>
<author><name sortKey="Garcia Perez, M A" uniqKey="Garcia Perez M">M. A. Garcia Perez</name>
<affiliation wicri:level="3"><inist:fA14 i1="02"><s1>CNRS, INSA, URA 358 lab. physique matériaux</s1>
<s2>69621 Villeurbanne</s2>
<s3>FRA</s3>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
</inist:fA14>
<country>France</country>
<placeName><region type="region" nuts="2">Rhône-Alpes</region>
<settlement type="city">Villeurbanne</settlement>
</placeName>
</affiliation>
</author>
<author><name sortKey="Benyattou, T" uniqKey="Benyattou T">T. Benyattou</name>
<affiliation wicri:level="3"><inist:fA14 i1="02"><s1>CNRS, INSA, URA 358 lab. physique matériaux</s1>
<s2>69621 Villeurbanne</s2>
<s3>FRA</s3>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
</inist:fA14>
<country>France</country>
<placeName><region type="region" nuts="2">Rhône-Alpes</region>
<settlement type="city">Villeurbanne</settlement>
</placeName>
</affiliation>
</author>
<author><name sortKey="Guillot, G" uniqKey="Guillot G">G. Guillot</name>
<affiliation wicri:level="3"><inist:fA14 i1="02"><s1>CNRS, INSA, URA 358 lab. physique matériaux</s1>
<s2>69621 Villeurbanne</s2>
<s3>FRA</s3>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
</inist:fA14>
<country>France</country>
<placeName><region type="region" nuts="2">Rhône-Alpes</region>
<settlement type="city">Villeurbanne</settlement>
</placeName>
</affiliation>
</author>
<author><name sortKey="Sacilotti, M" uniqKey="Sacilotti M">M. Sacilotti</name>
<affiliation wicri:level="3"><inist:fA14 i1="03"><s1>Univ. Bourgogne, inst. univ. technologie-GMP</s1>
<s2>21004 Dijon</s2>
<s3>FRA</s3>
<sZ>5 aut.</sZ>
</inist:fA14>
<country>France</country>
<placeName><region type="region" nuts="2">Bourgogne</region>
<settlement type="city">Dijon</settlement>
</placeName>
</affiliation>
</author>
<author><name sortKey="Letartre, X" uniqKey="Letartre X">X. Letartre</name>
<affiliation wicri:level="3"><inist:fA14 i1="04"><s1>CNRS Ecole cent. Lyon, URA 848 lab. electronique</s1>
<s2>69131 Ecully</s2>
<s3>FRA</s3>
<sZ>6 aut.</sZ>
</inist:fA14>
<country>France</country>
<placeName><region type="region" nuts="2">Rhône-Alpes</region>
<settlement type="city">Ecully</settlement>
</placeName>
</affiliation>
</author>
</titleStmt>
<publicationStmt><idno type="inist">96-0047626</idno>
<date when="1995">1995</date>
<idno type="stanalyst">PASCAL 96-0047626 INIST</idno>
<idno type="RBID">Pascal:96-0047626</idno>
<idno type="wicri:Area/Main/Corpus">01B761</idno>
<idno type="wicri:Area/Main/Repository">01C393</idno>
</publicationStmt>
<seriesStmt><idno type="ISSN">0268-1242</idno>
<title level="j" type="abbreviated">Semicond. sci. technol.</title>
<title level="j" type="main">Semiconductor science and technology</title>
</seriesStmt>
</fileDesc>
<profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Acceptors</term>
<term>Aluminium arsenides</term>
<term>Band offset</term>
<term>Binary compounds</term>
<term>Binding energy</term>
<term>Energy-level splitting</term>
<term>Experimental study</term>
<term>Impurity states</term>
<term>Indium arsenides</term>
<term>Indium phosphides</term>
<term>Localized states</term>
<term>Photoluminescence</term>
<term>Self consistency</term>
<term>Semiconductor materials</term>
<term>Solid-solid interfaces</term>
<term>Ternary compounds</term>
</keywords>
<keywords scheme="Pascal" xml:lang="fr"><term>Photoluminescence</term>
<term>Interface solide solide</term>
<term>Etat impureté</term>
<term>Accepteur</term>
<term>Etat localisé</term>
<term>Energie liaison</term>
<term>Discontinuité bande</term>
<term>Autocohérence</term>
<term>Matériau semiconducteur</term>
<term>Composé binaire</term>
<term>Composé ternaire</term>
<term>Indium phosphure</term>
<term>Indium arséniure</term>
<term>Aluminium arséniure</term>
<term>Etude expérimentale</term>
<term>Décomposition niveau énergie</term>
<term>7866F</term>
</keywords>
</textClass>
</profileDesc>
</teiHeader>
<front><div type="abstract" xml:lang="en">We report the temperature dependence of Al<sub>0.46</sub>
In<sub>0.54</sub>
As photoluminescence (PL) transition energies and Al<sub>0.46</sub>
In<sub>0.54</sub>
As/InP interface staggered line-up luminescence (SLL) energy. The S shape appearing from 4 to 90 K on the energy versus temperature curves of these PL energies is due to extrinsic recombinations. In particular, the S shape of the SLL energy curve versus temperature is probably due to acceptor impurities localized in AllnAs, at the interface (on-edge impurities). The binding energy of on-edge impurities is lower than its value in the bulk material. This explains why the S shape is less pronounced on the SLL than on the AllnAs PL curve. The band offsets were determined by solving the Schrödinger-Poisson equation system with a self-consistent calculation program. At 4.5 K, the conduction and valence band offsets of the Al<sub>0.46</sub>
In<sub>0.54</sub>
As/InP interface were respectively 0.384 eV and 0.295 eV. This is in agreement with the already reported value of 410 meV for the conduction band offset of the lattice-matched Al<sub>0.48</sub>
In<sub>0.52</sub>
As/InP heterostructure. The temperature dependence of the conduction and valence band offsets is shown to be important : respectively 35 meV and 23 meV between 4.5 and 300 K. The Van Vechten-Malloy model (following a thermodynamic approach) for the temperature dependence of the band offsets is compared with our results. The comparison shows only a qualitative agreement.</div>
</front>
</TEI>
<inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0268-1242</s0>
</fA01>
<fA02 i1="01"><s0>SSTEET</s0>
</fA02>
<fA03 i2="1"><s0>Semicond. sci. technol.</s0>
</fA03>
<fA05><s2>10</s2>
</fA05>
<fA06><s2>12</s2>
</fA06>
<fA08 i1="01" i2="1" l="ENG"><s1>Photoluminescence and band offsets of AlInAs/InP</s1>
</fA08>
<fA11 i1="01" i2="1"><s1>ABRAHAM (P.)</s1>
</fA11>
<fA11 i1="02" i2="1"><s1>GARCIA PEREZ (M. A.)</s1>
</fA11>
<fA11 i1="03" i2="1"><s1>BENYATTOU (T.)</s1>
</fA11>
<fA11 i1="04" i2="1"><s1>GUILLOT (G.)</s1>
</fA11>
<fA11 i1="05" i2="1"><s1>SACILOTTI (M.)</s1>
</fA11>
<fA11 i1="06" i2="1"><s1>LETARTRE (X.)</s1>
</fA11>
<fA14 i1="01"><s1>CNRS Univ. Claude Bernard Lyon, URA 116 lab. physico chimie minérale</s1>
<s2>69622 Villeurbanne</s2>
<s3>FRA</s3>
<sZ>1 aut.</sZ>
</fA14>
<fA14 i1="02"><s1>CNRS, INSA, URA 358 lab. physique matériaux</s1>
<s2>69621 Villeurbanne</s2>
<s3>FRA</s3>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
</fA14>
<fA14 i1="03"><s1>Univ. Bourgogne, inst. univ. technologie-GMP</s1>
<s2>21004 Dijon</s2>
<s3>FRA</s3>
<sZ>5 aut.</sZ>
</fA14>
<fA14 i1="04"><s1>CNRS Ecole cent. Lyon, URA 848 lab. electronique</s1>
<s2>69131 Ecully</s2>
<s3>FRA</s3>
<sZ>6 aut.</sZ>
</fA14>
<fA20><s1>1585-1594</s1>
</fA20>
<fA21><s1>1995</s1>
</fA21>
<fA23 i1="01"><s0>ENG</s0>
</fA23>
<fA43 i1="01"><s1>INIST</s1>
<s2>21041</s2>
<s5>354000055003930060</s5>
</fA43>
<fA44><s0>0000</s0>
</fA44>
<fA45><s0>40 ref.</s0>
</fA45>
<fA47 i1="01" i2="1"><s0>96-0047626</s0>
</fA47>
<fA60><s1>P</s1>
</fA60>
<fA61><s0>A</s0>
</fA61>
<fA64 i1="01" i2="1"><s0>Semiconductor science and technology</s0>
</fA64>
<fA66 i1="01"><s0>GBR</s0>
</fA66>
<fC01 i1="01" l="ENG"><s0>We report the temperature dependence of Al<sub>0.46</sub>
In<sub>0.54</sub>
As photoluminescence (PL) transition energies and Al<sub>0.46</sub>
In<sub>0.54</sub>
As/InP interface staggered line-up luminescence (SLL) energy. The S shape appearing from 4 to 90 K on the energy versus temperature curves of these PL energies is due to extrinsic recombinations. In particular, the S shape of the SLL energy curve versus temperature is probably due to acceptor impurities localized in AllnAs, at the interface (on-edge impurities). The binding energy of on-edge impurities is lower than its value in the bulk material. This explains why the S shape is less pronounced on the SLL than on the AllnAs PL curve. The band offsets were determined by solving the Schrödinger-Poisson equation system with a self-consistent calculation program. At 4.5 K, the conduction and valence band offsets of the Al<sub>0.46</sub>
In<sub>0.54</sub>
As/InP interface were respectively 0.384 eV and 0.295 eV. This is in agreement with the already reported value of 410 meV for the conduction band offset of the lattice-matched Al<sub>0.48</sub>
In<sub>0.52</sub>
As/InP heterostructure. The temperature dependence of the conduction and valence band offsets is shown to be important : respectively 35 meV and 23 meV between 4.5 and 300 K. The Van Vechten-Malloy model (following a thermodynamic approach) for the temperature dependence of the band offsets is compared with our results. The comparison shows only a qualitative agreement.</s0>
</fC01>
<fC02 i1="01" i2="3"><s0>001B70H66F</s0>
</fC02>
<fC03 i1="01" i2="3" l="FRE"><s0>Photoluminescence</s0>
<s5>01</s5>
</fC03>
<fC03 i1="01" i2="3" l="ENG"><s0>Photoluminescence</s0>
<s5>01</s5>
</fC03>
<fC03 i1="02" i2="3" l="FRE"><s0>Interface solide solide</s0>
<s5>02</s5>
</fC03>
<fC03 i1="02" i2="3" l="ENG"><s0>Solid-solid interfaces</s0>
<s5>02</s5>
</fC03>
<fC03 i1="03" i2="3" l="FRE"><s0>Etat impureté</s0>
<s5>03</s5>
</fC03>
<fC03 i1="03" i2="3" l="ENG"><s0>Impurity states</s0>
<s5>03</s5>
</fC03>
<fC03 i1="04" i2="3" l="FRE"><s0>Accepteur</s0>
<s5>04</s5>
</fC03>
<fC03 i1="04" i2="3" l="ENG"><s0>Acceptors</s0>
<s5>04</s5>
</fC03>
<fC03 i1="05" i2="3" l="FRE"><s0>Etat localisé</s0>
<s5>05</s5>
</fC03>
<fC03 i1="05" i2="3" l="ENG"><s0>Localized states</s0>
<s5>05</s5>
</fC03>
<fC03 i1="06" i2="3" l="FRE"><s0>Energie liaison</s0>
<s5>06</s5>
</fC03>
<fC03 i1="06" i2="3" l="ENG"><s0>Binding energy</s0>
<s5>06</s5>
</fC03>
<fC03 i1="07" i2="X" l="FRE"><s0>Discontinuité bande</s0>
<s5>07</s5>
</fC03>
<fC03 i1="07" i2="X" l="ENG"><s0>Band offset</s0>
<s5>07</s5>
</fC03>
<fC03 i1="07" i2="X" l="SPA"><s0>Discontinuidad banda</s0>
<s5>07</s5>
</fC03>
<fC03 i1="08" i2="X" l="FRE"><s0>Autocohérence</s0>
<s5>08</s5>
</fC03>
<fC03 i1="08" i2="X" l="ENG"><s0>Self consistency</s0>
<s5>08</s5>
</fC03>
<fC03 i1="08" i2="X" l="SPA"><s0>Autocoherencia</s0>
<s5>08</s5>
</fC03>
<fC03 i1="09" i2="3" l="FRE"><s0>Matériau semiconducteur</s0>
<s5>09</s5>
</fC03>
<fC03 i1="09" i2="3" l="ENG"><s0>Semiconductor materials</s0>
<s5>09</s5>
</fC03>
<fC03 i1="10" i2="3" l="FRE"><s0>Composé binaire</s0>
<s5>10</s5>
</fC03>
<fC03 i1="10" i2="3" l="ENG"><s0>Binary compounds</s0>
<s5>10</s5>
</fC03>
<fC03 i1="11" i2="3" l="FRE"><s0>Composé ternaire</s0>
<s5>11</s5>
</fC03>
<fC03 i1="11" i2="3" l="ENG"><s0>Ternary compounds</s0>
<s5>11</s5>
</fC03>
<fC03 i1="12" i2="3" l="FRE"><s0>Indium phosphure</s0>
<s2>NK</s2>
<s5>13</s5>
</fC03>
<fC03 i1="12" i2="3" l="ENG"><s0>Indium phosphides</s0>
<s2>NK</s2>
<s5>13</s5>
</fC03>
<fC03 i1="13" i2="3" l="FRE"><s0>Indium arséniure</s0>
<s2>NK</s2>
<s5>14</s5>
</fC03>
<fC03 i1="13" i2="3" l="ENG"><s0>Indium arsenides</s0>
<s2>NK</s2>
<s5>14</s5>
</fC03>
<fC03 i1="14" i2="3" l="FRE"><s0>Aluminium arséniure</s0>
<s2>NK</s2>
<s5>15</s5>
</fC03>
<fC03 i1="14" i2="3" l="ENG"><s0>Aluminium arsenides</s0>
<s2>NK</s2>
<s5>15</s5>
</fC03>
<fC03 i1="15" i2="3" l="FRE"><s0>Etude expérimentale</s0>
<s5>16</s5>
</fC03>
<fC03 i1="15" i2="3" l="ENG"><s0>Experimental study</s0>
<s5>16</s5>
</fC03>
<fC03 i1="16" i2="3" l="FRE"><s0>Décomposition niveau énergie</s0>
<s5>17</s5>
</fC03>
<fC03 i1="16" i2="3" l="ENG"><s0>Energy-level splitting</s0>
<s5>17</s5>
</fC03>
<fC03 i1="17" i2="3" l="FRE"><s0>7866F</s0>
<s2>PAC</s2>
<s4>INC</s4>
<s5>56</s5>
</fC03>
<fC07 i1="01" i2="3" l="FRE"><s0>Composé minéral</s0>
<s5>12</s5>
</fC07>
<fC07 i1="01" i2="3" l="ENG"><s0>Inorganic compounds</s0>
<s5>12</s5>
</fC07>
<fN21><s1>022</s1>
</fN21>
</pA>
</standard>
</inist>
</record>

Pour manipuler ce document sous Unix (Dilib)

EXPLOR_STEP=IndiumV3/Data/Main/Repository

HfdSelect -h $EXPLOR_STEP/biblio.hfd -nk 01C393 | SxmlIndent | more

HfdSelect -h $EXPLOR_AREA/Data/Main/Repository/biblio.hfd -nk 01C393 | SxmlIndent | more

Pour mettre un lien sur cette page dans le réseau Wicri

{{Explor lien
   |wiki=   *** parameter Area/wikiCode missing *** 
   |area=    IndiumV3
   |flux=    Main
   |étape=   Repository
   |type=    RBID
   |clé=     Pascal:96-0047626
   |texte=   Photoluminescence and band offsets of AlInAs/InP
}}

This area was generated with Dilib version V0.5.77.
Data generation: Mon Jun 9 10:27:54 2014. Site generation: Thu Mar 7 16:19:59 2024

	Serveur d'exploration sur l'Indium
	Attention, ce site est en cours de développement ! Attention, site généré par des moyens informatiques à partir de corpus bruts. Les informations ne sont donc pas validées.

Serveur d'exploration sur l'Indium

Photoluminescence and band offsets of AlInAs/InP

Photoluminescence and band offsets of AlInAs/InP

Descripteurs français

English descriptors

Abstract

Links toward previous steps (curation, corpus...)

Links to Exploration step

Le document en format XML

Pour manipuler ce document sous Unix (Dilib)

Pour mettre un lien sur cette page dans le réseau Wicri